Chemical bonding states and band alignment of ultrathin AlOxNy/Si gate stacks grown by metalorganic chemical vapor deposition

The chemical bonding states and band alignment of ultrathin AlOxNy/Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry were investigated by synchrotron radiation photoemission spectroscopy (SRPES). The depth distribution profile of the Al 2p binding energy states remained unchanged which indicates no formation of an Al-silicate layer. Judging from the deconvolution of Si 2p spectra, it was inferred that the AlOxNy/Si interface consists mainly of Si2O3 and SiO2. On the basis of the valence-band spectra and photoelectron energy loss spectra, we evaluated the valence- and conduction-band offsets of AlOxNy films on Si in detail. (author)