Effect of Na doping on structural and optical properties in Cu2ZnSnS4 thin films synthesized by thermal evaporation method
Creators
- 1. Ecole Nationale d'Ingénieurs de Tunis, Laboratoire de Photovoltaïques et Matériaux Semi-conducteurs, Université de Tunis El Manar, 37 Le Bélvédère, Tunis 1002 (Tunisia)
- 2. Institut préparatoire aux études d'ingénieurs de Tunis, Laboratoire de Photovoltaïques et Matériaux Semi-conducteurs, Université de Tunis, 37 Le Bélvédère, Tunis 1002 (Tunisia)
Description
Highlights: • Na-doped Cu2ZnSnS4 thin films were prepared via thermal evaporation method. • Na incorporation in Cu2ZnSnS4 thin films improve the cristallinity and graine size. • Cu2ZnSnS4: Na 5% sample shows optical band gap of 1.59 eV with p-type conductivity. -- Abstract: Quaternary chalcogenide Cu2ZnSnS4 (CZTS) compound, a potential material for application as absorber layer in thin film solar cells, is synthesized by direct melting of the constituent elements taken in stoichiometry compositions. Alkali element Na was incorporated into CZTS thin films synthesized by thermal evaporation method, in order to further improve the structural and optical properties. X-Ray diffraction (XRD), Raman spectroscopy, Energy dispersive spectrometry and optical spectrophotometry were used to characterise the phase purity and optical properties. It showed that the diffusion of Na ions is uniform in the films after annealing. XRD analysis showed that CZTS films possess polycrystalline structure with [221] preferred orientation. Na ions incorporation in CZTS thin films could improve the cristallinity, the graine size and the absorption coefficient. For CZTS: Na 5%, optical results revealed higher absorption coefficient (>105 cm−1) and direct optical band gap of 1.56 eV with p-type conductivity.
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2018.12.046;
- PII
- S0040609018308654;
Publishing Information
- Journal Title
- Thin Solid Films (Print)
- Journal Volume
- 672
- Journal Page Range
- p. 41-46
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55041213
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; CDZNTE SEMICONDUCTOR DETECTORS; COPPER; DOPED MATERIALS; EVAPORATION; GRAIN ORIENTATION; OPTICAL PROPERTIES; POLYCRYSTALS; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SODIUM; SODIUM IONS; SOLAR CELLS; SPECTROPHOTOMETRY; STOICHIOMETRY; THIN FILMS; TIN SULFIDES; X-RAY DIFFRACTION; ZINC
- Descriptors DEC
- ALKALI METALS; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FILMS; IONS; LASER SPECTROSCOPY; MATERIALS; MEASURING INSTRUMENTS; METALS; MICROSTRUCTURE; ORIENTATION; PHASE TRANSFORMATIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SCATTERING; SEMICONDUCTOR DETECTORS; SOLAR EQUIPMENT; SORPTION; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TIN COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.