Published 1991 | Version v1
Report Restricted

Comparison of low-energy x-ray and cobalt-60 irradiations of MOS devices as a function of gate bias

Creators

  • 1. Sandia National Labs., Albuquerque, NM (USA)
  • 2. L and M Technologies, Inc., Albuquerque, NM (USA)

Description

The E-1/2 electric field dependence of the saturated density of interface traps in MOS devices is used to improve estimates of charge yield during 60Co irradiations. Previous discrepancies between 10-keV x-ray and 60Co response are resolved. 14 refs., 7 figs

Availability note (English)

MF available from INIS under the Report Number; OSTI as DE91008174; NTIS; INIS; US Govt. Printing Office Dep.

Files

Restricted

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Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
SAND--91-0448C

Conference

Title
IEEE annual international nuclear and space radiation effects conference.
Dates
15-19 Jul 1991.
Place
San Diego, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22086011
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COBALT 60; ELECTRIC FIELDS; GAMMA RADIATION; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; X RADIATION
Descriptors DEC
BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTROMAGNETIC RADIATION; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; TRANSISTORS; YEARS LIVING RADIOISOTOPES

Optional Information

Contract/Grant/Project number
Contract AC04-76DP00789
Funding organization
Department of Defense, Washington, DC (USA).
Secondary number(s)
CONF-910751--4.