Published August 21, 2011 | Version v1
Journal article

Czochralski growth and scintillation properties of Bi4Si3O12 (BSO) single crystal

  • 1. Department of Physics, Kyungpook National University, Daegu 702-701 (Korea, Republic of)
  • 2. Department of Physics, Abdul Wali Khan University, Mardan 23200 (Pakistan)
  • 3. Department of Radiology Technology, Cheongju University, Cheongju 360-764 (Korea, Republic of)
  • 4. Department of Radiation, Sorabol College, Gyeongju 780-711 (Korea, Republic of)

Description

We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2011.05.043

Additional details

Identifiers

DOI
10.1016/j.nima.2011.05.043;
PII
S0168-9002(11)00954-5;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
648
Journal Issue
1
Journal Page Range
p. 73-76
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.