Published July 14, 2014
| Version v1
Journal article
Picosecond dynamics of a silicon donor based terahertz detector device
Creators
- 1. Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
- 2. London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH (United Kingdom)
- 3. Laboratoire de Chemie Physique, Université Paris-Sud 11, 91405 Orsay (France)
- 4. Institute of Micro/Nanoelectronics, Peking University, Beijing (China)
Description
We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 × 10−11 W Hz−1/2. The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing.
Additional details
Identifiers
- DOI
- 10.1063/1.4890526;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 2
- Journal Page Range
- p. 021107-021107.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46017236
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DETECTION; EQUIPMENT; FREE ELECTRON LASERS; METALS; NOISE; OXIDES; PULSES; QUANTUM INFORMATION; SEMICONDUCTOR MATERIALS; SILICON; THZ RANGE
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FREQUENCY RANGE; INFORMATION; LASERS; MATERIALS; OXYGEN COMPOUNDS; SEMIMETALS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC