Published December 15, 2009 | Version v1
Journal article

EDEPR of impurity centers embedded in silicon microcavities

  • 1. Ioffe Physical-Technical Institute, 194021 St.Petersburg (Russian Federation)
  • 2. Institut fuer Festkoerperphysik, TU Berlin, D-10623 Berlin (Germany)

Description

We present the first findings of the new electrically-detected EPR (EDEPR) technique which reveal different shallow and deep centers without using the external cavity as well as the hf source and recorder, with measuring the only magnetoresistance of the Si-QW confined by the superconductor δ-barriers.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2009.08.247

Additional details

Identifiers

DOI
10.1016/j.physb.2009.08.247;
arXiv
arXiv:0910.3851v1;
PII
S0921-4526(09)01027-8;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
404
Journal Issue
23-24
Journal Page Range
p. 5140-5143
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
25. international conference on defects in semiconductors
Dates
20-24 Jul 2009
Place
St. Petersburg (Russian Federation)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41089755
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CAVITIES; ELECTRON SPIN RESONANCE; IMPURITIES; MAGNETORESISTANCE; QUANTUM WELLS; SILICON; SUPERCONDUCTORS
Descriptors DEC
ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; MAGNETIC RESONANCE; NANOSTRUCTURES; PHYSICAL PROPERTIES; RESONANCE; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.