Published April 5, 2004
| Version v1
Journal article
Modification of GaN(0001) growth kinetics by Mg doping
Creators
- 1. Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
- 2. NGK Isulators, LTD. 2-54 Sudacho, Mizuhoku, Nagoya (Japan)
- 3. DRT/LETI/DTS, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
Description
We have studied the effect of Mg doping on the surface kinetics of GaN during growth by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface of GaN, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN. The growth window is hence significantly reduced. Higher growth temperatures lead to an enhancement of Mg segregation and an improvement of the surface morphology
Additional details
Identifiers
- DOI
- 10.1063/1.1705719;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 84
- Journal Issue
- 14
- Journal Page Range
- p. 2554-2556
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36045075
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; GALLIUM NITRIDES; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PLASMA; PROCESSING; SEGREGATION; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SURFACES; SURFACTANTS; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CRYSTAL GROWTH METHODS; EPITAXY; FILMS; GALLIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES
Optional Information
- Notes
- (c) 2004 American Institute of Physics.