Structural, chemical and optical properties of the polyethylene–copper sulfide composite thin films synthesized using polythionic acid as sulfur source

Graphical abstract: Several crystalline copper sulfide phases (spionkopite, anilite, digenite, djurleite, chalcocite) were obtained in as synthesized samples (PE-Cu_xS) and elucidated using XRD. Thickness of the films obtained ranged from several microns to ∼18 μm and depended on the Cu(II/I) exposure time. Bandgap of the materials obtained was measured and ranged from 1.88 to 1.17 eV. Importantly, heating samples, many copper sulfide crystalline phase containing films at 100 °C in inert atmosphere invariably resulted in a single copper sulfide, anilite (Cu_1.75S), phase. - Highlights: • We investigated deposition of a single phase copper sulfide on polyethylene. • A single sulfur precursor – H₂S₃₃O₆ – was used. • Increasing exposure time to Cu(II/I) yielded Cu_xS with higher x values. • Heating at 100 °C in N₂ resulted in a single anilite (Cu_1.75S) phase. • Cu(I) and Cu(II) compounds were detected using XPS. - Abstract: Synthesis and properties of thin copper sulfide films deposited on polyethylene were explored for the development of low cost hybrid organic–inorganic photovoltaic materials. Polyethylene was used as a model organic host material for thin copper sulfide film formation. Adsorption–diffusion method was used which utilized consecutive exposure of polyethylene to polythionic acid followed by aqueous Cu(II/I) solution. Several crystalline copper sulfide phases were obtained in synthesized samples and elucidated using X-ray diffraction. Surface chemical composition determined using X-ray photoelectron spectroscopy showed the presence of copper sulfides in combination with copper hydroxide. Thickness of the composite material films ranged from several microns to ∼18 μm and depended on the Cu(II/I) exposure time. Bandgap of the materials obtained was measured and ranged from 1.88 to 1.17 eV. Importantly, heating these complex copper sulfide crystalline phase containing films at 100 °C in inert atmosphere invariably resulted in a single copper sulfide, anilite (Cu_1.75S), phase. Anilite possesses a bandgap of 1.36 eV and has demonstrated excellent photovoltaic properties. Thus, the method described in this work can be used for a low cost large scale composite thin film photovoltaic material deposition based on anilite as photoactive material