Published September 5, 2003 | Version v1
Journal article

Sharply increasing effective mass: a precursor of a spontaneous spin polarization in a dilute two-dimensional electron system

  • 1. Physics Department, Northeastern University, Boston, MA 02115 (United States)
  • 2. Institute of Solid State Physics, Chernogolovka, Moscow District 142432 (Russian Federation)
  • 3. Department of Applied Physics, Delft University of Technology, 2628 CJ Delft (Netherlands)

Description

We have measured the effective mass, m, and Lande g factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons' spins and (ii) analysis of the Shubnikov-de Haas oscillations. We have observed a sharp increase of the effective mass with decreasing electron density while the g factor remains nearly constant and close to its value in bulk silicon. The corresponding strong rise of the spin susceptibility χ ∝ gm may be a precursor of a spontaneous spin polarization; unlike in the Stoner scenario, it originates from the enhancement of the effective mass rather than from the increase of g factor. Furthermore, using tilted magnetic fields, we have found that the enhanced effective mass is independent of the degree of spin polarization and, therefore, its increase is not related to spin exchange effects, in contradiction with existing theories. Our results show that the dilute 2D electron system in silicon behaves well beyond a weakly interacting Fermi liquid

Availability note (English)

Available online at http://stacks.iop.org/0305-4470/36/9237/a33510.pdf or at the Web site for the Journal of Physics. A, Mathematical and General (ISSN 1361-6447) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. A, Mathematical and General
Journal Volume
36
Journal Issue
35
Journal Page Range
p. 9237-9247
ISSN
0305-4470
CODEN
JPHAC5

Conference

Title
International workshop on strongly correlated electrons in new materials
Dates
14-17 Dec 2002
Place
Loughborough (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
34071789
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
EFFECTIVE MASS; ELECTRON DENSITY; ELECTRONIC STRUCTURE; ELECTRONS; FERMI LEVEL; LANDE FACTOR; MAGNETIC FIELDS; SEMICONDUCTOR JUNCTIONS; SHUBNIKOV-DE HAAS EFFECT; SILICON; SPIN
Descriptors DEC
ANGULAR MOMENTUM; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; LEPTONS; MASS; PARTICLE PROPERTIES; SEMIMETALS