Published March 31, 2003 | Version v1
Journal article Metadata-only

Thermoelectric properties of Al1-xInxN and Al1-y-zGayInzN prepared by radio-frequency sputtering: Toward a thermoelectric power device

Creators

  • 1. Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1-1-1, Tsukuba 305-8568 (Japan)
  • 2. Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3-27-1 Rokkakubashi, Kanagawa-ku, Yokohama 221-8686 (Japan)

Description

With the aim of fabricating a thermoelectric power device using III-nitride semiconductors, we recently studied thermoelectric properties of Al1-xInxN and Al1-y-zGayInzN prepared by rf sputtering. For Al0.35In0.65N with 0.63-μm thickness, the maximum power factor was 3.63x10-4 W/mK2. For Al0.26Ga0.44In0.30N, the maximum power factor was 5.58x10-5 W/mK2

Additional details

Identifiers

DOI
10.1063/1.1560560;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
82
Journal Issue
13
Journal Page Range
p. 2065-2067
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35037722
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ALUMINIUM COMPOUNDS; GALLIUM COMPOUNDS; GRADED BAND GAPS; INDIUM COMPOUNDS; RF SYSTEMS; SEMICONDUCTOR MATERIALS; SPUTTERING; THERMOELECTRIC PROPERTIES; THERMOELECTRICITY; THIN FILMS
Descriptors DEC
ELECTRICAL PROPERTIES; ELECTRICITY; FILMS; MATERIALS; PHYSICAL PROPERTIES

Optional Information

Notes
(c) 2003 American Institute of Physics.