Bandgap tunability of Aurivillius Bi4NdTi3(Fe0.5M0.5)O15 (M=Cr, Ni, Fe, Co, Mn) thin films
- 1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics & Electronic Sciences, Hubei University, Wuhan, 430062, PR (China)
Description
Aurivillius Bi4NdTi3(Fe0.5M0.5)O15 (M-BNTF, M = Cr, Ni, Fe, Co, Mn) thin films were prepared by a sol-gel method. Single-phase four-layered perovskite structure of all the M-BNTF thin films was characterized by X-ray diffraction and FT-IR spectra. Typical plate-like grains with different grain sizes were observed in the M-BNTF thin films. Optical properties were measured by a UV–vis spectrometer, and all the films have direct bandgaps. The bandgaps of the Cr-, Ni-, Fe-, Co- and Mn-BNTF films were calculated to be about 3.45, 2.84, 2.58, 2.47 and 2.37 eV respectively through the Tauc's power law. The bandgap tuning is attributed to the cationic disorder and the large distortion of MO6 octahedron by the M ions doping which was verified by the calculation of lattice parameters and Raman measurements. The present work may help shed light on the origin of the bandgap tunability for bismuth-contained Aurivillius ferroelectric compounds and promote them to get more extensively application in the new photovoltaic cells and other novel optoelectronic devices.
Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2018.09.308;
- PII
- S0925838818335679;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 773
- Journal Page Range
- p. 934-939
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55067637
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH; FERROELECTRIC MATERIALS; FOURIER TRANSFORM SPECTROMETERS; GRAIN SIZE; INFRARED SPECTRA; IONS; LATTICE PARAMETERS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PEROVSKITE; PHOTOVOLTAIC EFFECT; SOLAR CELLS; SOL-GEL PROCESS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; DIELECTRIC MATERIALS; DIFFRACTION; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; MEASURING INSTRUMENTS; METALS; MICROSTRUCTURE; MINERALS; OPTICAL EQUIPMENT; OXIDE MINERALS; PEROVSKITES; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SCATTERING; SIZE; SOLAR EQUIPMENT; SPECTRA; SPECTROMETERS; TRANSDUCERS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.