Published March 1994
| Version v1
Journal article
Copper amphoteric behaviour in indium phosphide
- 1. Voronezhskij Politekhnicheskij Inst., Voronezh (Russian Federation)
Description
Results of investigations of copper impurity behaviour in n-and p-InP are presented. From Hall measurements, investigation of optical absorption spectra and results of isothermic annealing is drawn the conclusion on the amphoteric character of copper electric activity. A donor level with energy Eν+0.01 eV connected with interstitial copper is found. A supposition on the nature of the level is made. 8 refs., 3 figs., 1 tab
Additional details
Additional titles
- Original title (Russian)
- Amfoternoe povedenie medi v fosfide indiya
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 28
- Journal Issue
- 3
- Journal Page Range
- p. 467-471.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26005182
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BINDING ENERGY; CARRIER DENSITY; CHARGE CARRIERS; COPPER ADDITIONS; CRYSTAL DEFECTS; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRONS; HALL EFFECT; INDIUM PHOSPHIDES; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; VALENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY; FERMIONS; HEAT TREATMENTS; INDIUM COMPOUNDS; LEPTONS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES