Published October 1985
| Version v1
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Detection of charged particles in amorphous silicon layers
Description
The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE86003992.
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Additional details
Publishing Information
- Imprint Pagination
- 7 p.
- Report number
- LBL--19665
Conference
- Title
- IEEE nuclear science symposium.
- Dates
- 23-25 Oct 1985.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17036936
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- AMORPHOUS STATE; EXPERIMENTAL DATA; PERFORMANCE; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS; SIZE
- Descriptors DEC
- DATA; INFORMATION; MEASURING INSTRUMENTS; NUMERICAL DATA; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Secondary number(s)
- CONF-851009--30.