Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions

Silicon diodes fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities (1, 2 and 15 kΩ cm) were irradiated with neutrons, pions and protons to fluences up to 2.4x1014 n/cm-2. Effective trapping times for electrons and holes were determined by the charge correction method in the temperature range between -50 deg. C and 20 deg. C. The measured effective trapping probabilities scale linearly with fluence and decrease with increasing temperature. Irradiation with charged hadrons resulted in about 30% higher trapping probabilities than with neutrons at the same equivalent fluence. No dependence on silicon resistivity and oxygen concentration was found. The temperature dependence could be parameterized by a power-law scaling. Accelerated annealing at 60 deg. C showed a 30% increase of hole trapping, measured at 10 deg. C, and a decrease by about the same amount for electron trapping, both at a time scale of 10 h