Silicon reflection spectrum in the range of Lsub(2,3) ionization threshold

In the field of quantum energies h/2πω=90-190 eV reflection spectra are obtained from the plane of monocrystal silicon by means of a specially developed X ray spectrometer-monochromator RSM-500 chamber attachment. The hyperfine structure of silicon reflection spectrum is investigated with the energy apparatus resolution of the RSM-500 monochromator ΔF approximately 0.3 eV at sliding radiation incidence angle on the sample at 4.8 and 12 deg. Absolute values of reflection coefficients measured at the spectrum are corrected by means of comparison with reflection coefficient values which are obtained in the course of measurements on characteristic X ray lines. It has been found that the hyperfine spectrum structure is perfectly reproduced at all reflection angles used while energy positions of its details practically remain unchanged. As a result of comparison of hyperfine structure of reflection spectra obtained with the data of transmission technique and external photoeffect quantum yield for all spectra a perfect correlation of structure details reflecting energy structure of silicon conductivity zone