Published January 2015 | Version v1
Journal article Metadata-only

Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell

Creators

  • 1. Russian Academy of Sciences, Institute of Physics of Microstructures (Russian Federation)
  • 2. Nizhni Novgorod State University, Physical Technical Research Institute (Russian Federation)
  • 3. Nizhni Novgorod State University (Russian Federation)

Description

The results of complex analysis of the parameters of the GaAs/AlGaAs semiconductor superlattice with a complex unit cell using mathematical modeling and experimental methods of transmission electron microscopy, energy-dispersive analysis, and spectroscopy of photoluminescence and photocurrent are presented. Suppression of the intraband static negative differential conductivity under strong interaction conditions between minibands and the inharmonic electron-dispersion law is shown

Additional details

Identifiers

DOI
10.1134/S1063782615010236;

Publishing Information

Journal Title
Semiconductors
Journal Volume
49
Journal Issue
1
Journal Page Range
p. 118-123
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47039910
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM ARSENIDES; DISPERSIONS; ELECTRONS; EMISSION SPECTROSCOPY; GALLIUM ARSENIDES; MATHEMATICAL MODELS; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; EMISSION; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; LUMINESCENCE; MATERIALS; MICROSCOPY; PHOTON EMISSION; PNICTIDES; SPECTROSCOPY

Optional Information

Copyright
Copyright (c) 2015 Pleiades Publishing, Ltd.