Published 1979
| Version v1
Miscellaneous
Analysis of ion-doped profiles of potassium atoms in annealing silicon crystals
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Анализ ионно-легированных профилей атомов калия в кристаллах кремния, подвергнутых термическому отжигу
Publishing Information
- Imprint Title
- Preliminary programme and summaries of reports of 10. Conference on problems of charged particles beams application for studying the composition and properties of the matter
- Imprint Pagination
- 170 p.
- Journal Page Range
- p. 108.
- Report number
- INIS-SU--107
Conference
- Title
- 10. Conference on problems of charged particles beams application for studying the composition and properties of the matter.
- Dates
- 28 - 30 May 1979.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 14715832
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; BACKSCATTERING; CRYSTALS; DEPTH; HELIUM IONS; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 10-100; MEDIUM TEMPERATURE; MEV RANGE 01-10; POTASSIUM IONS; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MEV RANGE; SCATTERING; SEMIMETALS
Optional Information
- Notes
- Short note. Imprint:Predvaritel'naya programma i tezisy dokladov 10. Soveshchaniya po problemam primeneniya puchkov zaryazhennykh chastits dlya izucheniya sostava i svojstv veshchestva.;Tezisy dokladov.