In situ photoemission spectroscopy for chemical reaction dynamics study of Si (001) oxidation by using high-energy-resolution synchrotron radiation

The translation kinetic energy of incident molecules is an important parameter for the study of surface chemical reaction mechanisms. New adsorption reactions, which have been induced by the O2 translational kinetic energy up to 3 eV, have been found in the O2Si(001) system by applying surface-sensitive photoemission spectroscopy with supersonic molecular beam techniques and high-energy-resolution synchrotron radiation. The termination of dangling bonds of the topmost Si-dimers strongly affected the oxidation of their backbonds. By controlling the translational kinetic energy of incident O2 molecules, the formation of oxide layers at a sub-nanometer scale is possible at room temperature. (author)