Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400-700 deg. C

The effect of irradiation with electrons on the formation of quenched-in donors in silicon is studied. It is found that n- and p-type regions are formed in the bulk of single-crystal silicon as a result of irradiation with electrons and subsequent annealing at a temperature of 450 deg. C. The concentration of charge carriers in the regions of both types increases as the radiation dose and the annealing duration increase, which indicates that not only quenched-in donors but also quenched-in acceptors are formed. Nonuniformity in the distribution of the acceptor and donor centers correlates with fluctuations of the oxygen concentration in silicon