Published January 2006 | Version v1
Journal article

Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy

  • 1. Kyoto Inst. of Technology, Dept. of Electronics and Information Science, Kyoto, Kyoto (Japan)
  • 2. Kyoto Inst. of Technology, Cooperative Research Center, Kyoto, Kyoto (Japan)
  • 3. Lab. of High-Tech Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing (China)
  • 4. National Inst. of Advanced Industrial Science and Technology, Ikeda, Osaka (Japan)

Description

GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix (x=5%) and GaAs was estimated to be approximately 0.5%. (author)

Additional details

Publishing Information

Journal Title
Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications and Review Papers
Journal Volume
45
Journal Issue
1A
Journal Page Range
p. 67-69
ISSN
0021-4922

Optional Information

Notes
12 refs., 3 figs.