Published January 2006
| Version v1
Journal article
Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy
Creators
- 1. Kyoto Inst. of Technology, Dept. of Electronics and Information Science, Kyoto, Kyoto (Japan)
- 2. Kyoto Inst. of Technology, Cooperative Research Center, Kyoto, Kyoto (Japan)
- 3. Lab. of High-Tech Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing (China)
- 4. National Inst. of Advanced Industrial Science and Technology, Ikeda, Osaka (Japan)
Description
GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix (x=5%) and GaAs was estimated to be approximately 0.5%. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications and Review Papers
- Journal Volume
- 45
- Journal Issue
- 1A
- Journal Page Range
- p. 67-69
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 37054313
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIC ALLOYS; BISMUTH ALLOYS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; ELASTICITY; GALLIUM ALLOYS; GALLIUM ARSENIDES; LATTICE PARAMETERS; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; STRAINS; SUBSTRATES; TERNARY ALLOY SYSTEMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MECHANICAL PROPERTIES; PNICTIDES; SCATTERING; SPECTROSCOPY
Optional Information
- Notes
- 12 refs., 3 figs.