Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core–shell nanorods
- 1. Física Materia Condensada, GdS Optronlab, Universidad de Valladolid, 47011 Valladolid (Spain)
- 2. Institut Jaume Almera, ICTJA-CSIC, Consejo Superior de Investigaciones Científicas, E-08028 Barcelona (Spain)
Description
Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core–shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor–acceptor pair band emission peaking at 3.26–3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/27/9/095706Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 27
- Journal Issue
- 9
- Journal Page Range
- [9 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47112681
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANNEALING; CATHODOLUMINESCENCE; DEFECTS; DOPED MATERIALS; GALLIUM NITRIDES; NANOSTRUCTURES; OPTICAL ACTIVITY; VAPOR PHASE EPITAXY; VAPORS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; FLUIDS; GALLIUM COMPOUNDS; GASES; HEAT TREATMENTS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES