Structural and electrical characteristics of RF sputtered YON gate dielectrics and their thin-film transistor applications

In this paper, we report on rf sputtered high-k YON gate dielectrics and their application on transparent thin-film transistors (TFTs). The N incorporation into the Y2O3 matrix is believed to restrain crystalline growth which enables a low leakage current, but boost ion polarization or/and dipole oscillation which results in dielectric frequency dispersion. After forming gas annealing (FGA) treatment, the detrimental polarization mechanisms responsible for the dielectric frequency dispersion are minimized. As a result, it is found that both the 400 0C FGA treated YON gate dielectrics and the TFTs based on them present competitive electrical properties.