Published August 1, 2008 | Version v1
Journal article

Low temperature synthesis of ITO thin film on polymer in Ar/H2 plasma by pulsed DC magnetron sputtering

  • 1. Center for Advanced Plasma Surface Technology, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, 400-746 (Korea, Republic of)

Description

Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at low temperature less than 100 oC by pulsed DC magnetron sputtering. The microstructure evolution of ITO thin film was investigated by employing the hydrogen gas in Ar discharge. The discharge behavior with hydrogen gas addition was analyzed by optical emission spectroscopy (OES) and microstructure change was investigated by XRD and TEM. It could be confirmed that the discharge with a mixture gas of hydrogen and Ar made an effect on the ionization of indium and oxygen gases as measured by OES and also significantly promoted the formation of crystallites of ITO in amorphous matrix. As a result, the resistivity of ITO film was significantly improved to 5.27 x 10-4 Ω.cm at 0.026 Pa of hydrogen partial pressure below 100 deg. C in comparison with 2.65 x 10-3 Ω.cm under hydrogen free condition

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.11.028

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.11.028;
PII
S0040-6090(07)01886-X;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
19
Journal Page Range
p. 6560-6564
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
20. symposium on plasma science for materials
Acronym
SPSM-20
Dates
21-22 Jun 2007
Place
Nagoya (Japan)

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.