Radiation defect formation processes in quartz

Migration processes of electron-alkaly ion pairs (e-, Me+) and e-, H+ from O-Me+ and O-H+-groups of structure defects to three-coordinated Si↑ ions near interstitial iron atoms are shown to proceed under γ-radiation of r-crystals of amethyst in the dose range from 104 to 106 R. These processes create necessary conditions for proceeding the processes of colliding Me+ and H+ ion migration in the dose range from 3x105 to 107 R. Formation (during amethyst irradiation with doses higher 106 R) of considerable concentrations of broken Si-O bindings causes the processes of e-, Me+ pairs migration from the growth defects to these radiation traps. The models of radiation-induced processes suggested explain well kinetics of changing under γ-radiation of main parameters of optical absorption spectra in UV-, visible and IR-regions, acoustic (f=1 MHz) and dielectric (f=1 kHz) losses of artificial amethyst