Published June 1994 | Version v1
Journal article

Wettability control of polystyrene by ion implantation

  • 1. SONY Corporation, Corporate Research Laboratory, 6-7-35, Kitashinagawa, Shinagawa-ku, Tokyo 141 (Japan)
  • 2. The Institute of Physical and Chemical Research (RIKEN) 2-1, Hirosawa, Wako-shi, Saitama 351-01 (Japan)

Description

The permanent effects of ion implantation on the improvement of wettability of polystyrene is investigated in relation to ion species and fluences. The He+, Ne+, Na+, N2+, O2+, Ar+, K+ and Kr+ ion implantations were performed at energies of 50 and 150 keV at room temperature. The fluences ranged from 1x1015 to 1x1017 ions/cm2. The results showed that the contact angle of water for Na+ and K+ implanted polystyrene decreased from 87 to 0 , as the fluences increased to 1x1017 ions/cm2 at an energy of 50 keV. The contact angle for Na+ and K+ implanted polystyrene did not change under ambient room conditions, even when time elapsed. However, the contact an gle for He+, C+, O+, Ne+, N2+, O2+, Ar+, and Kr+ ion implanted specimens decreased slightly immediately after ion implantation. Results of X-ray photoelectron spectroscopy showed that the increase in the Na content in the surface of Na+ implanted specimens were observed with increasing fluence. It is concluded that permanent improvement in wettability was caused by doping effects rather than by radiation effects from Na+ and K+ ion implantation. ((orig.))

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
91
Journal Issue
1-4
Journal Page Range
p. 584-587.
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
7. international conference on radiation effects in insulators (REI-7).
Dates
6-10 Sep 1993.
Place
Nagoya (Japan).