Published April 1987
| Version v1
Journal article
Influence of defects created by laser irradiation on the photoluminescence of nitrogen-doped gallium phosphide
- 1. M. V. Lomonosov State Univ., Moscow (USSR)
Description
The authors found earlier that irradiation of GaP with pulses from an ultraviolet excimer laser generated defects in a thin (∼60 nm) surface layer. The present paper reports an investigation of the influence of these defects on the photoluminescence spectra of GaP:N
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 21
- Journal Issue
- 4
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 453-454
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21078513
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- DATA PROCESSING; DEFECTS; DOPED MATERIALS; EXPERIMENTAL DATA; GALLIUM PHOSPHIDES; LASER RADIATION; MEASURING INSTRUMENTS; MEASURING METHODS; NITROGEN; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; USSR
- Descriptors DEC
- DATA; DEVELOPED COUNTRIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; EUROPE; GALLIUM COMPOUNDS; INFORMATION; LUMINESCENCE; MATERIALS; NONMETALS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; RADIATION EFFECTS; RADIATIONS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).