Published May 18, 1998 | Version v1
Journal article

Annealing of defects in AuIn2 after irradiation with electrons at low temperatures

  • 1. IFF, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

Description

AuIn2 films were irradiated below 10 K with electrons of four different energies (0.65 to 2.5 MeV) up to an irradiation dose of 3.56x1019 e- cm-2. The irradiated samples were isochronally annealed and the recovery of the radiation damage was investigated by measuring the residual electrical resistivity. Characteristic for the recovery of the resistivity is a large narrow stage centred at 100 K of which the position is independent of electron dose and electron energy. Only the height of this stage increases with decreasing irradiation dose and electron energy. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
10
Journal Issue
19
Journal Page Range
p. 4195-4199
ISSN
0953-8984