CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)
- 1. Dipartimento di Chimica, Materiali e Ing. Chimica "Giulio Natta", Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)
- 2. Dipartimento di Chimica, Materiali e Ing. Chimica "Giulio Natta", Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)
- 3. Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy)
Description
Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu2ZnSnS4 (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N2 atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N2 atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose results matched up with the literatures.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2016.04.062Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2016.04.062;
- PII
- S0169-4332(16)30803-0;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 379
- Journal Page Range
- p. 91-97
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48021437
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ANNEALING; ELECTRODEPOSITION; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; EXCITATION; FOILS; GLOW DISCHARGES; LAYERS; PHOTOLUMINESCENCE; PRECURSOR; QUARTZ; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; SULFUR; TEMPERATURE RANGE 0065-0273 K; THICKNESS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DEPOSITION; DIFFRACTION; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRIC DISCHARGES; ELECTROLYSIS; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; FILMS; HEAT TREATMENTS; LASER SPECTROSCOPY; LUMINESCENCE; LYSIS; MICROSCOPY; MINERALS; NONMETALS; OXIDE MINERALS; PHOTOELECTRIC CELLS; PHOTON EMISSION; PHOTOVOLTAIC CELLS; SCATTERING; SOLAR EQUIPMENT; SPECTROSCOPY; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.