Published April 16, 1986
| Version v1
Journal article
Role of defects in the annealing behaviour of RF sputtered CdS films
Creators
- 1. Universidad Complutense de Madrid (Spain). Dept. de Electricidad y Electronica
- 2. Universidad Complutense de Madrid (Spain). Facultad de Ciencias Fisicas
Description
The defect structure of CdS thin films grown by RF sputtering is studied by electrical and positron annihilation measurements after different thermal treatments. It is shown that for annealing temperatures below 475 K desorbed impurities (probably oxygen) cause an increase in both, the carrier mobility and concentration. For annealing temperatures above 475 K, positron annihilation measurements reveal a S-vacancy agglomeration in agreement with the electrical measurements. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 94
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 587-593
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17066400
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANNIHILATION; CADMIUM SULFIDES; CARRIER DENSITY; CARRIER MOBILITY; CRYSTAL DEFECTS; DESORPTION; ELECTRIC CONDUCTIVITY; ELECTRON-POSITRON INTERACTIONS; FILMS; GRAIN BOUNDARIES; HALL EFFECT; LIFETIME; POSITRONS; SPUTTERING; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HEAT TREATMENTS; INTERACTIONS; LEPTON-LEPTON INTERACTIONS; LEPTONS; MATTER; MICROSTRUCTURE; MOBILITY; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; POINT DEFECTS; SULFIDES; SULFUR COMPOUNDS