The fabrication and characterization of 4H—SiC power UMOSFETs

The fabrication of 4H—SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper. The device has a 15-μm thick drift layer with 3×1015 cm−3 N-type doping concentration and a 3.1-μm channel length. The measured on-state source—drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V. The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics. A specific on-resistance (Rsp-on) is 181 mΩ·cm2 at Vg = 40 V and a blocking voltage (BV) is 880 V (IDS = 100 μA@880V) at Vg = 0 V. (condensed matter: electronic structure, electrical, magnetic, and optical properties)