Published July 13, 2015 | Version v1
Journal article Metadata-only

Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

Creators

  • 1. Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

Description

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO2, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiNx, and (3) a PECVD SiOx/SiNx dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the Vo concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiNx (high Vo) and SiO2 (low Vo) had the highest and lowest conductivity, respectively. A PECVD SiOx/SiNx dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films

Additional details

Identifiers

DOI
10.1063/1.4926495;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
2
Journal Page Range
p. 023501-023501.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47053183
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ABUNDANCE; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; DIFFUSION; GALLIUM; HYDROGEN; INDIUM; LAYERS; PHOTOLUMINESCENCE; PLASMA; SILICON OXIDES; SPECTROSCOPY; THIN FILMS; TRANSISTORS; X RADIATION; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; FILMS; IONIZING RADIATIONS; LUMINESCENCE; MATERIALS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SURFACE COATING; ZINC COMPOUNDS

Optional Information

Notes
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