Published December 2010 | Version v1
Miscellaneous Open

Technological impurities role in the formation of radiation defects Si, irradiated by 60Co gamma- quanta

  • 1. Research Institute of Applied Physics, National University of Uzbekistan, Tashkent (Uzbekistan)

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Part of:
Proceedings of III republic conference of young physicists of Uzbekistan 'Nuclear physics and nuclear technologies'

Additional details

Additional titles

Original title (Russian)
Роль технологических примесей в образовании радиационных дефектов в кремнии, облученном гамма-квантами

Publishing Information

Publisher
O'zbekiston Respublikasi Fanlar Akademiyasi Yadro Fizikasi Instituti
Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Proceedings of III republic conference of young physicists of Uzbekistan 'Nuclear physics and nuclear technologies'
Imprint Pagination
290 p.
Journal Page Range
p. 176-180
Report number
INIS-UZ--172

Conference

Title
III republic conference of young physicists of Uzbekistan 'Nuclear physics and nuclear technologies'
Original Conference Title
III respublikanskaya konferentsiya molodykh fizikov Uzbekistana 'Yadernaya fizika i yadernye tekhnologii'
Dates
1-2 Dec 2010
Place
Tashkent (Uzbekistan)

Optional Information

Notes
3 refs., 2 figs. Imprint:Sbornik dokladov III respublikanskoj konferentsii molodykh fizikov Uzbekistana 'Yadernaya fizika i yadernye tekhnologii'