Published April 2005 | Version v1
Journal article

Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures

  • 1. Belarussian State University of Informatics and Radioelectronics, ul. Brovki 17, Minsk, 220027 (Belarus)
  • 2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
  • 3. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation)

Description

n-ZnO:Al/PdPc/p-CuIn3Se5 photosensitive structures have been proposed and fabricated for the first time by vacuum sublimation of palladium phthalocyanine on the surface of wafers of the ternary semiconductor compound CuIn3Se5 and by magnetron sputtering of n-ZnO:Al films on the surface of palladium phthalocyanine films. The current-voltage characteristics and spectra of the photoconversion quantum efficiency of the obtained structures are investigated. It is shown that these structures can be used as multiband white-light converters

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
39
Journal Issue
4
Journal Page Range
p. 402-405
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 426-429 (No. 4, 2005); (c) 2005 Pleiades Publishing, Inc.