Published 1971
| Version v1
Book
Effects of dose rate and implantation temperature on lattice damage and electrical activity in ion-implanted GaAs
Creators
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Springer-Verlag New York, Inc.
- Imprint Place
- New York
- Imprint Title
- Ion Implantation in Semiconductors
- Imprint Pagination
- p. 157-167.
Conference
- Title
- 2. international conference on ion implantation in semiconductors.
- Dates
- 24 May 1971.
- Place
- Garmisch-Partenkirchen, Germany.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 3029771
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIDES; CARBON IONS; CRYSTAL DEFECTS; DOPED MATERIALS; DOSE RATES; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; ION IMPLANTATION; RADIATION EFFECTS; SILICON IONS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; IONS; PHYSICAL PROPERTIES