Nonlinear absorption and receptivity of the third order in InAs infrared region

Nonlinear absorption and receptivity of the third order and coefficient nonlinear absorption in InAs n-type with different degree of alloying was measured. Obtained score considerably exceed sense, calculated on the basis of the models describing nonlinear receptivity of electrons, situated in the nonparabolic area of conductivity. It was shown that, observable deviations withdraw; if in the calculation apply energy dissipation of electrons. Growth of the efficiency under four-wave interaction in low-energy-gap semiconductors confines nonlinear absorption of interacting waves