Published May 2006 | Version v1
Journal article Metadata-only

Light emitting diodes structures obtained by overlapping the liquid phase epitaxy and gas phase diffusion of Zn

Creators

  • 1. Physical-Technical Institute AS RU, NPO 'Physics-Sun', Tashkent (Uzbekistan)

Description

The light emitting diodes structures manufactured by various ways are investigated. Analysis of the current-voltage curves shows, that the overlapping the liquid phase epitaxy with gas phase diffusion Zn allows to get rid of leakage currents resulting to without radiation recombination. (author)

Additional details

Additional titles

Original title (Russian)
Светодиодные структуры, полученные путем совмещения жидкофазной эпитаксии и газофазной диффузии Зн

Publishing Information

Journal Title
Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari
Journal Issue
no.3
Journal Page Range
p. 30-33
ISSN
1019-8954

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
39122837
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; CRYSTAL DOPING; CRYSTAL GROWTH; GALLIUM ARSENIDES; GERMANIUM; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTOVOLTAIC EFFECT; SILICON; SUPERCONDUCTING FILMS; THIN FILMS; TRACE AMOUNTS; ZINC
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; FILMS; GALLIUM COMPOUNDS; MATERIALS; METALS; PHOTOELECTRIC EFFECT; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Notes
3 refs., 1 fig.