Published December 2019 | Version v1
Journal article

Strong optical nonlinearity of ultrathin graphitic films synthesized on dielectric substrates

  • 1. Department of Optoelectronics, Center for Physical Sciences and Technology, Saulétekio al. 3, LT-10222 Vilnius (Lithuania)
  • 2. Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu (Finland)
  • 3. College of Optical Sciences, University of Arizona, Tucson, AZ 85721 (United States)
  • 4. Department of Physics, University of Arizona, Tucson, AZ 85721 (United States)
  • 5. A. M. Prokhorov General Physics Institute, Moscow, 119991 (Russian Federation)

Description

We propose and demonstrate a scalable technique to grow a thin polycrystalline graphitic film directly onto a fused silica substrate. The technique is based on the pyrolysis of a photoresist in the presence of a sacrificial 10 nm thick nickel catalyst layer. The synthesized graphitic film with a thickness of about 50 nm possesses almost constant 40% absorptance over visual and near infrared spectral regions. By using Raman characterization, third harmonic generation spectroscopy, and the Z-scan technique we perform a comparative study of the films pyrolyzed with and without a Ni catalyst. We show that the amorphous carbon dominates the linear and nonlinear optical properties of the resist film pyrolyzed without the Ni catalyst. In contrast, in presence of a Ni catalyst layer, the pyrolysis leads to a graphitic film that demonstrates a strong saturable absorption behavior at 1550 nm wavelength and has a nonlinear refractive index comparable with that of graphene. Thus, the developed, transfer-free synthesis technique provides an alternative route towards the controllable growth of wafer scale graphitic films on the dielectric substrates for photonics applications.

Additional details

Identifiers

DOI
10.1016/j.apsusc.2019.143766;
PII
S0169433219325723;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
497
Journal Page Range
vp.
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2019 Elsevier B.V. All rights reserved.