Published June 8, 2015 | Version v1
Journal article

Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures

  • 1. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
  • 2. Ecole Polytechnique Fédérale de Lausanne, Institute of Quantum Electronics and Photonics, Station 3, CH-1015 Lausanne (Switzerland)
  • 3. SUPA, School of Physics and Astronomy, University of St. Andrews, North Haugh, KY16 9SS St. Andrews (United Kingdom)
  • 4. Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D-97074 Würzburg (Germany)
  • 5. COBRA Research Institute, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands)

Description

We demonstrate a non-classical photon emitter at near infrared wavelength based on a single (In,Ga)As/GaAs epitaxially grown columnar quantum dot. Charged exciton complexes have been identified in magneto-photoluminescence. Photon auto-correlation histograms from the recombination of a trion confined in a columnar dot exhibit sub-Poissonian statistics with an antibunching dip yielding g(2)(0) values of 0.28 and 0.46 at temperature of 10 and 80 K, respectively. Our experimental findings allow considering the GaAs-based columnar quantum dot structure as an efficient single photon source operating at above liquid nitrogen temperatures, which in some characteristics can outperform the existing solutions of any material system

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
23
Journal Page Range
p. 233107-233107.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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