Simulation of diffusion controlled selective epitaxial growth

A new approach to simulate the diffusion controlled selective epitaxial growth is presented. In this approach the concentration profile of the growing material at the mask free areas of the substrate surface is at first calculated. Afterwards, a virtual diffusion process with the calculated surface concentration as the diffusion source is performed. The simulation result is then presented through an iso-concentration line, whose value is determined by fitting to an experimental result. The influence of the fit parameters on the simulation result is investigated.(author)