Analyzing degradation effects of organic light-emitting diodes via transient optical and electrical measurements
- 1. Institute of Physics, University of Augsburg, Augsburg (Germany)
- 2. Center of Frontier Science, Chiba University, Chiba (Japan)
- 3. Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, Kawasaki (Japan)
Description
Although the long-term stability of organic light-emitting diodes (OLEDs) under electrical operation made significant progress in recent years, the fundamental underlying mechanisms of the efficiency decrease during operation are not well understood. Hence, we present a comprehensive degradation study of an OLED structure comprising the well-known green phosphorescent emitter Ir(ppy)3. We use transient methods to analyze both electrical and optical changes during an accelerated aging protocol. Combining the results of displacement current measurements with time-resolved investigation of the excited states lifetimes of the emitter allows for a correlation of electrical (e.g., increase of the driving voltage due to trap formation) and optical (e.g., decrease of light-output) changes induced by degradation. Therewith, it is possible to identify two mechanisms resulting in the drop of the luminance: a decrease of the radiative quantum efficiency of the emitting system due to triplet-polaron-quenching at trapped charge carriers and a modified charge carrier injection and transport, as well as trap-assisted non-radiative recombination resulting in a deterioration of the charge carrier balance of the device
Additional details
Identifiers
- DOI
- 10.1063/1.4921829;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 117
- Journal Issue
- 21
- Journal Page Range
- p. 215502-215502.10
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46118760
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHARGE CARRIERS; CORRELATIONS; ELECTRIC POTENTIAL; EXCITED STATES; LIFETIME; LIGHT EMITTING DIODES; OPERATION; QUANTUM EFFICIENCY; QUENCHING; RECOMBINATION; TIME RESOLUTION; TRANSIENTS; TRAPPING; TRAPS; TRIPLETS; VISIBLE RADIATION
- Descriptors DEC
- EFFICIENCY; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; MULTIPLETS; RADIATIONS; RESOLUTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TIMING PROPERTIES
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC