Published November 24, 1998 | Version v1
Journal article

Development of a metrology method for composition and thickness of barium strontium titanate thin films

  • 1. Semiconductor Technology, Semiconductor Products Sector, Motorola Inc., Mesa, Arizona, 85202 (United States)
  • 2. Semiconductor Technology, Semiconductor Products Sector, Motorola Inc., Austin, Texas, 78721 (United States)

Description

Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
449
Journal Issue
1
Journal Page Range
p. 278-282
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
1998 international conference on characterization and metrology for ULSI technology
Dates
23-27 Mar 1998
Place
Gaithersburg, MD (United States)

Optional Information

Notes
(c) 1998 American Institute of Physics.