Published March 2004
| Version v1
Journal article
Structure of GaAs surface irradiated by 705-MeV Bi ions
- 1. Belorusskij Gosudarstvennyj Univ., Minsk (Belarus)
- 2. NAN Belarusi, Inst. Fiziki Tverdogo Tela i Poluprovodnikov, Minsk (Belarus)
- 3. Ob''edinennyj Inst. Yadernykh Issledovanij, Dubna (Russian Federation)
Description
The radiation defects on the surface and in the volume of the crystalline gallium arsenide, irradiated by bismuth high-energy ions, are studied through the methods of the atomic-power microscopy and selective etching. The morphology is determined, the diameters and the extension of the track areas, formed in the GaAs by the fast ions transition, are evaluated
Abstract (Russian)
Методами атомно-силовой микроскопии и селективного травления исследованы радиационные дефекты на поверхности и в объеме кристаллического арсенида галлия, облученного высокоэнергетическими ионами висмута. Определена морфология, оценены диаметры и протяженность трековых областей, сформированных в GaAs при прохождении быстрых ионовAdditional details
Additional titles
- Original title (Russian)
- Структура поверхности GaAs, облученного ионами висмута с энергией 705 МэВ
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 68
- Journal Issue
- 3
- Journal Page Range
- p. 317-319
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- 16. International conference on ion-surface interaction (ISI-2003)
- Original Conference Title
- XVI Mezhdunarodnaya konferentsiya: vzaimodejstvie ionov s poverkhnost'yu VIP-2003
- Dates
- Aug 2003
- Place
- Zvenigorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 36039873
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH IONS; CRYSTALS; GALLIUM ARSENIDES; ION BEAMS; MEV RANGE 100-1000; SURFACE PROPERTIES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; MEV RANGE; PNICTIDES
Optional Information
- Notes
- 14 refs., 2 figs.