Published April 23, 2007 | Version v1
Journal article

Influence of Substrate Nature and Annealing on Electro-Optical Properties of ZnO Thin Films

  • 1. Al.I. Cuza University, Faculty of Physics, 11 Carol I Blvd., RO-700506, Iasi (Romania)
  • 2. National Institute of Research and Development. for Technical Physics. 47 Mangeron Boulevard, Iasi, RO-700050 (Romania)

Description

ZnO thin films were grown on different substrates (glass, quartz, silicon wafers, etc) by vacuum thermal evaporation. Different thermal treatments were performed in order to obtain transparent and conductive or high resistive ZnO thin films. The optical and electrical properties of ZnO thin films are dependent on the crucible temperature, annealing conditions and on the substrate nature. The thin films are transparent and have an electrical resistivity in 10-4 Ωm regio. The annealing process performed in vacuum at 573K or under UV irradiation determines a decrease in the electrical resistivity of films

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
899
Journal Issue
1
Journal Page Range
p. 253-254
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
6. international conference of the Balkan Physical Union
Dates
22-26 Aug 2006
Place
Istanbul (Turkey)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39074354
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; ELECTRIC CONDUCTIVITY; IRRADIATION; OPACITY; QUARTZ; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; THIN FILMS; ULTRAVIOLET RADIATION; VACUUM COATING; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; HEAT TREATMENTS; MATERIALS; MINERALS; OPTICAL PROPERTIES; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SURFACE COATING; ZINC COMPOUNDS

Optional Information

Notes
(c) 2007 American Institute of Physics