Published December 2011 | Version v1
Journal article

The detection technology of PIN silicon photodiode applied in the n/γ mixed radiation field

  • 1. National Institute of Measurement and Testing Technology, Chengdu (China)
  • 2. Chengdu University of Technology (China)

Description

PIN-type silicon semiconductor detectors, which is widely used in Personal dosimeters, X-ray fluorescence analysis, coating thickness measurement, diagnostic radiology and other particle radiation measurement, have faster response, stronger anti-interference, smaller size, higher sensitivity, higher energy resolution and without high voltage than traditional radiation detectors. We use the 6LiI crystal and BGO to change the n and γ-ray spectrum into the effective detection range of PIN. Referenced to the equivalent circuit model of the PIN silicon photodiode, we design the charge preamplifier circuit and the measurement system to match it. At the same time, we do the sample measurement and spectrum analysis of the preamplifier noise, pulse of rays and electromagnetic radiation interference digital measurement Finally, we complete the detectors repeatability, sensitivity, energy response performance testing experiments. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
31
Journal Issue
12
Journal Page Range
p. 1341-1344
ISSN
0258-0934

Optional Information

Notes
7 figs., 2 tabs., 6 refs.