Published February 1979
| Version v1
Journal article
Study of p-type indium arsenide by optical methods
- 1. Leningradskij Politekhnicheskij Inst. (USSR)
Description
Reflection and absorption spectra of indium arcenide alloyed with zinc are studied. The concentration of free holes varied from 9.9x1016 to 2.07x1019 sm-3. Effective masses of free holes are calculated from the reflection spectra at T=300 and 100 K, the bredth of the forbidden zone and the mechanism of carrier scattering being determined from the absorption spectra. The displacement of the additional absorption peak at the change of concentration and temperature is explained by making calculations according to the Kann theory
Additional details
Additional titles
- Original title (Russian)
- Исследование дырочного арсенида индия оптическими методами
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 13
- Journal Issue
- 2
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 242-247
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 10485604
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; EFFECTIVE MASS; ENERGY GAP; HOLE MOBILITY; INDIUM ARSENIDES; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; QUANTITY RATIO; TEMPERATURE DEPENDENCE; ZINC ADDITIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; INDIUM COMPOUNDS; MASS; MOBILITY; SEMICONDUCTOR MATERIALS; SPECTRA
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).