Published January 2009 | Version v1
Journal article Metadata-only

A Closed-Form Model for Position-Dependent Potential across the Channel in DG-MOSFETs

Creators

  • 1. Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

Description

A closed-form model for electrostatic potential distribution in the direction normal to the channel for double-gate (DG) MOSFETs is presented. The effects of doping (NA for nMOS) and minority carriers both are taken into account for the first time, in solving Poisson's equation analytically. Excellent agreement between model-predicted results and numerical device simulation is achieved for a wide range of body thickness, light or high channel-doping, under various bias conditions. This complete closed form for position-dependent potential distribution has wide applications for MOS compact modelling and device design

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/26/1/018501

Additional details

Identifiers

DOI
10.1088/0256-307X/26/1/018501;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
26
Journal Issue
1
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44124048
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CHARGE CARRIERS; COMPUTERIZED SIMULATION; MOSFET; POISSON EQUATION; POTENTIALS; SILICON OXIDES; VISIBLE RADIATION
Descriptors DEC
CHALCOGENIDES; DIFFERENTIAL EQUATIONS; ELECTROMAGNETIC RADIATION; EQUATIONS; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; OXIDES; OXYGEN COMPOUNDS; PARTIAL DIFFERENTIAL EQUATIONS; RADIATIONS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SIMULATION; TRANSISTORS