Interfacial and bulk electronic properties of complex oxides and buried interfaces probed by HAXPES

Highlights: ► Analysis of well screened satellites and electron screening in complex oxides ► Identification of DOS electronic character in LSMO ► Analysis of s-states contribution in organic spintronics systems. -- Abstract: Designing, understanding and controlling the properties of engineered and functional materials, based on oxides and buried interfaces, is one of the most flourishing research fields and one of the major challenges faced by contemporary solid state science and technology. Often, a reliable spectroscopic analysis of such systems is hindered by surface effects, as structural distortion, stoichiometry changes, strong reactivity to external agent and major atomic and/or electronic reconstruction to name but a few. Hard X-Ray PhotoEmission Spectroscopy (HAXPES) is a powerful technique to overcome such limitations, allowing to monitor truly bulk sensitive properties. We report selected HAXPES results for manganese-based oxides, both in films and crystal forms, and for buried metal–organic interfaces, with the aim of highlighting some of the important features such technique brings in the analysis of electronic properties of the solids