Published March 2013 | Version v1
Report Metadata-only

Difference of radiation tolerance with p- and n-type JFETs

Creators

  • 1. Kumamoto National College of Technology, Koshi, Kumamoto (Japan)
  • 2. Chuo Denshi Kogyo Co., Ltd., Uki, Kumamoto (Japan)

Description

The radiation tolerance by 2 MeV electrons irradiated to the commercial-off-the-shelf (COTS) p- and n-JFETs was studied. For the situation of p-JFET, the drain current (ID) of the input characteristics decreased by electron irradiation. The ID decreasing attributed to the increase of channel resistance by electron irradiation. In contrast, for n-JFET, the ID decreases at the fluence lower than 1x1015 e/cm2, then the ID increases at the fluence higher than 5x1015 e/cm2. The anomalous ID behavior of n-JFET could be explained by considering extending and narrowing of the n-channel. (author)

Part of:
Proceedings of 10th international workshop on radiation effects on semiconductor devices for space applications

Additional details

Identifiers

URL
https://repository.exst.jaxa.jp/dspace/handle/a-is/17161;

Publishing Information

Imprint Title
Proceedings of 10th international workshop on radiation effects on semiconductor devices for space applications
Imprint Pagination
193 p.
Journal Page Range
p. 183-186
Report number
JAXA-SP--12-008E

Conference

Title
10. international workshop on radiation effects on semiconductor devices for space applications
Dates
10-12 Dec 2012
Place
Tsukuba, Ibaraki (Japan)

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
46087969
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ELECTRONIC EQUIPMENT; ELECTRONS; IRRADIATION; JUNCTION TRANSISTORS; SATELLITES; SILICON; SPACE; TOLERANCE
Descriptors DEC
ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; FERMIONS; LEPTONS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS

Optional Information

Notes
8 refs., 5 figs.