Published May 28, 2011 | Version v1
Journal article Metadata-only

Mode transitions in distributed Bragg reflector semiconductor lasers: experiments, simulations and analysis

Creators

  • 1. Weierstrass Institute, Mohrenstrasse 39, 10117 Berlin (Germany)
  • 2. Ferdinand-Braun-Institut, Leibniz-Insitut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany)

Description

The performance of a multisection distributed Bragg reflector (DBR) semiconductor laser emitting around 1.06 μm is experimentally and theoretically investigated. A thermal-induced change of the refractive index implied by an increase in the injection current yields nearly periodic transitions between neighbouring cavity modes. These transitions are explained by means of a modal analysis and by numerical simulations based on the travelling wave model.

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-4075/44/10/105401

Additional details

Identifiers

DOI
10.1088/0953-4075/44/10/105401;
PII
S0953-4075(11)85400-3;

Publishing Information

Journal Title
Journal of Physics. B, Atomic, Molecular and Optical Physics
Journal Volume
44
Journal Issue
10
Journal Page Range
[8 p.]
ISSN
0953-4075
CODEN
JPAPEH

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43013040
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
BRAGG REFLECTION; COMPUTERIZED SIMULATION; INJECTION; PERIODICITY; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; TRAVELLING WAVES
Descriptors DEC
INTAKE; LASERS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; REFLECTION; SEMICONDUCTOR DEVICES; SIMULATION; SOLID STATE LASERS; VARIATIONS