Published 1999 | Version v1
Book

X-pinch dynamics close to the time of x-ray burst emission and x-pinch bright spot location using x-ray backlighting

Description

In the final few ns before the moment of the x-ray burst emission near the cross point of the two wires in an X-pinch, an on-axis z-pinch forms, the dynamics of which have been studied using direct (point projection) x-ray backlighting. The rapid collapse of the z-pinch results in a gap in the observable mass distribution, which the authors refer to as a minidiode. Two Mo X-pinches were placed in parallel between the output electrodes of the 450 kA, 100 ns XP pulser at Cornell University. The <0.5 ns radiation burst from each of the two X-pinches was used to generate a magnified x-ray backlighter image on film of the other one. The size of the x-ray source is sufficiently small that the spatial resolution in the images is close to 1 microm. Using different wire sizes in the two X-pinches yields images separated in time by 4--20 ns; using the same wire size yields images separated in time by 0.5--2ns. Therefore, the dynamics of the rapid collapse of the on-axis z-pinch in conjunction with minidiode formation, and the break-up of that z-pinch just as the bright x-ray spots develop can be studied using the successive images from 4 ns before x-ray burst emission, through the moment of burst emission, to a few ns after burst emission. By superimposing images generated by both x-pinches of a grid of fine wires on the same films as the X-pinch images, it has been possible to locate the position of the bright x-ray emission point(s) in the z-pinch/minidiode region to within 10 microm. The emission points are usually within 100 microm of the original cross point of the two wires, near the ends of the collapsing z-pinch. Calibrated density measurements have been made with W X-pinches by including a W step wedge in the film pack. Results from these experiments will also be presented

Additional details

Publishing Information

Publisher
Institute of Electrical and Electronics Engineers, Inc.
Imprint Place
Piscataway, NJ (United States)
ISBN
0-7803-5224-6
Imprint Title
The 26th IEEE international conference on plasma science
Imprint Pagination
342 p.
Journal Page Range
p. 309
ISSN
0730-9244

Conference

Title
1999 IEEE International Conference on Plasma Science
Dates
20-24 Jun 1999
Place
Monterey, CA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
31032708
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DYNAMICS; IMAGES; LONGITUDINAL PINCH; MOLYBDENUM; PLASMA DENSITY; PLASMA DIAGNOSTICS; X RADIATION; X-RAY SOURCES
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; MECHANICS; METALS; PINCH EFFECT; RADIATION SOURCES; RADIATIONS; REFRACTORY METALS; TRANSITION ELEMENTS

Optional Information

Contract/Grant/Project number
FG02-98ER54496